STMicroelectronics STB180N55F3
This n-channel enhancement mode Power MOSFET is the latest refinement of so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility. The resulting transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche characteristics and c low gate charge.| Part No. | STB180N55F3 |
|---|---|
| Datasheet | STB180N55F3 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS RDS(on) ID Pw STB180N55F3 55V ) STP180N55F3 55V 3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc● Ultra low on-resistance d
● 100% avalanche tested Pro
DESCRIPTION
lete rodu Application Obsolete P● Switching applications 3 2 1 TO-220 3 1 D2PAK Internal schematic diagram Order codes Part number STB180N55F3 STP180N55F3 Marking 180N55F3 180N55F3 Package D2PAK TO-220 Packaging Tape & reel Tube June 2007 Rev 2 1/14 14 Contents Contents STB180N55F3 - STP180N55F3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 ) 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
