Datasheet4U Logo Datasheet4U.com

STB180N55F3 - N-CHANNEL MOSFET

General Description

so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility.

Key Features

  • Type VDSS RDS(on) ID Pw STB180N55F3 55V ) STP180N55F3 55V 3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc.
  • Ultra low on-resistance d.
  • 100% avalanche tested Pro.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB180N55 N-CHANNEL Power MOSFET ST Microelectronics
STB185N55 N-CHANNEL Power MOSFET ST Microelectronics
STB18N20 N-CHANNEL Power MOSFET ST Microelectronics
STB18N55M5 N-Channel MOSFET INCHANGE
STB18N65M5 N-Channel MOSFET INCHANGE

Other Datasheets by STMicroelectronics

Part Number Description
STB185N55F3 N-CHANNEL POWER MOSFET
STB18N55M5 N-channel Power MOSFET
STB18N60DM2 N-channel Power MOSFET
STB18N60M2 N-CHANNEL POWER MOSFET
STB18N60M6 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB180N55F3 STP180N55F3 N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET™ Power MOSFET Features Type VDSS RDS(on) ID Pw STB180N55F3 55V ) STP180N55F3 55V 3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc ■ Ultra low on-resistance d ■ 100% avalanche tested Pro Description lete This n-channel enhancement mode Power MOSFET is the latest refinement of so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility. The resulting transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche characteristics and c low gate charge.