STMicroelectronics STB18NF25
This Power MOSFET has been developed using STMicroelectronics' unique AM01475v1_noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.| Part No. | STB18NF25 |
|---|---|
| Datasheet | STB18NF25 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB18NF25 VDS 250 V RDS(on) max. 165 mΩ ID 17 A● AEC-Q101 qualified
● Exceptional dv/dt capability
● 100% avalanche tested
● Low gate charge
APPLICATIONS
● Switching applications G(1)DESCRIPTION
S(3) Product status link STB18NF25 Product summary Order code STB18NF25 Marking 18NF25 Package D²PAK Packing Tape and reel DS14370 - Rev 1 - July 2023 For further information contact your local STMicroelectronics sales office. STB18NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 17 A, di/dt ≤ 200 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA (1) Thermal resistance, junction-to-ambient 1.
