STMicroelectronics STB190NF04-1
N-CHANNEL POWER MOSFET
| Part No. | STB190NF04-1 |
|---|---|
| Datasheet | STB190NF04-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONS
s HIGH CURENT, HIGH SWITCHING SPEED s AUTOMOTIVE D2PAK TO-263 I2PAK TO-262 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(●) ID IDM(●●) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 40 40 ± 20 120 120 480 310 2.07 7 860 -55 to 175 (●●) Pulse width limited by safe operating area.
