STB19NB20-1 Datasheet PDF | STMicroelectronics

STMicroelectronics STB19NB20-1

The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part No.	STB19NB20-1
Datasheet	STB19NB20-1 Download
Manufacturer	STMicroelectronics
Description	N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Buy	Stock & Price

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj August 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature I PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM 2 12 3 Value STP(B)19NB20(-1) 200 200 ± 30 19 12 76 125 1 5.5 –65 to 150 150 (1)ISD ≤ 19 A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX Unit STP19NB20FP V V V 10 6...