STB19NM65N Description
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Table.
STB19NM65N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Switching