STMicroelectronics STB19NM65N
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STB19NM65N |
|---|---|
| Datasheet | STB19NM65N Download |
| Manufacturer |  STMicroelectronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 1 2 3 1. Limited only by maximum temperature allowed●
●
● 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D²PAK 1 TO-247 Figure 1. Internal schematic diagram Application
● Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters Table 1. Device summary Order codes STI19NM65N Marking 19NM65N 19NM65N 19NM65N 19NM65N 19NM65N Package I²PAK TO-220FP TO-220 D²PAK TO-247 Packaging Tube Tube Tube Tape and reel Tube STF19NM65N STP19NM65N STB19NM65NT4 STW19NM65N February 2008 Rev 1 1/19 19 Contents STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
