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STB200N04 - Power MOSFET

General Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process.

Key Features

  • Type STB200N04.
  • VDSS 40V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB200N04 N-channel 40V - 0.0035Ω - 120A - D2PAK Planar STripFET™ Power MOSFET General features Type STB200N04 ■ VDSS 40V RDS(on) <0.0040Ω ID 120A Pw 300W 100% avalanche tested drive 1 3 www.DataSheet4U.com ■ Standard threshold Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications.