STMicroelectronics STB200N04
Power MOSFET
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications. D²PAK Internal schematic diagramAPPLICATIONS
● Switching application – Automotive Order codes Part number STB200N04 Marking B200N04 Package D²PAK Packaging Tape & reel November 2006 Rev 1 1/13 13 Contents STB200N04 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .