STMicroelectronics STB200NF03-1
30V 120A N-Channel Power MOSFET
| Part No. | STB200NF03-1 |
|---|---|
| Datasheet | STB200NF03-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | 30V 120A N-Channel Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS Ordering Information SALES TYPE STB200NF03T4 STP200NF03 STB200NF03-1 MARKING B200NF03 P200NF03 B200NF03 PACKAGE D2PAK TO-220 I2PAK PACKAGING TAPE & REEL TUBE TUBEABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM(●) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature (●) Pulse width limited by safe operating area. (**) Current Limited by Package Value 30 30 ± 20 120 120 480 300 2.0 1.5 1.45 -55 to 175 Unit V V V A A A W W/°C V/ns J °C (1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX (2) Starting T j = 25 oC, ID = 60 A, VDD = 25 V October 2002 1/14DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
