STMicroelectronics STB200NF04L
This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility.| Part No. | STB200NF04L |
|---|---|
| Datasheet | STB200NF04L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL STripFET II MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
TYPE STB200NF04L STP200NF04L STB200NF04L-1 s s s Figure 1: Package RDS(on) 3.5 mΩ 3.8 mΩ 3.8 mΩ ID 120 A 120 A 120 A 3 1 2 VDSS 40 V 40 V 40 V TYPICAL RDS(on) = 3mΩ 100% AVALANCHE TESTED LOW THERESHOLD DRIVE 3 1 TO-220 D²PAKDESCRIPTION
This new improved device has been specifically designed for Automotive applications.APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED 3 12 I²PAK Figure 2: Internal Schematic Diagram Table 2: Order Codes PART NUMBER STP200NF04L STB200NF04L STB200NF04L-1 MARKING P200NF04L B200NF04L B200NF04L PACKAGE TO-220 D²PAK I²PAK PACKAGING TUBE TAPE & REEL TUBE Rev. 1 April 2005 1/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Table 3: Absolute Maximum ratings Symbol VDS VGDR VGS ID (**) ID IDM (2) PTOT dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS=20 KΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max.
