STMicroelectronics STB20PF75
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STB20PF75 |
|---|---|
| Datasheet | STB20PF75 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
● MOTOR CONTROL● DC-DC & DC-AC CONVERTERS D2PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(●) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 75 75 ± 20 20 14 80 80 0.53 10 350 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C (●) Pulse width limited by safe operating area (1) ISD ≤20A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 10 A, VDD = 30V Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed March 2004 1/9 DataSheet 4 U .com STB20PF75 THERMAL DATA...
