STMicroelectronics STB21N90K5
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STB21N90K5 |
|---|---|
| Datasheet | STB21N90K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 900V 18.5A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 2 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order codes VDS STB21N90K5 STF21N90K5 STP21N90K5 900 V STW21N90K5● Very low FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected RDS(on) max. 299 mΩ ID 18.5 A
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) These very high voltage N-channel Power MOSFETs are designed using MDmesh AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. Product status links STB21N90K5 STF21N90K5 STP21N90K5 STW21N90K5 DS6585 - Rev 7 - November 2025 For further information, contact your local STMicroelectronics sales office. STB21N90K5, STF21N90K5, STP21N90K5,STW21N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak d...
