STB21NM50N Datasheet | STMicroelectronics

STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N - - Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (- ) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 TO-220FP - 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 DESCRIPTION The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. .. It is therefore suitable for the most demanding high efficiency converters I2PAK 3 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N MARKING B21NM50N B21NM50N F21NM50N P21NM50N W21NM50N PACKAGE D2PAK I2PAK TO-220FP TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE TUBE TUBE Rev. 3 October 2005 1/16 STP21NM50N -...