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STB21NM50N - N-CHANNEL MOSFET

General Description

The STx21NM50N is realized with the second generation of MDmesh Technology.

This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N.
  • Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (.
  • ) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 TO-220FP.
  • 100%.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N ■ ■ Figure 1: Package RDS(on) < < < < < 0.19 0.19 0.19 0.19 0.19 Ω Ω Ω Ω Ω ID 18 A 18 A 18 A (*) 18 A 18 A VDSS (@Tjmax) 550 550 550 550 550 V V V V V 3 1 3 1 2 3 1 2 D2PAK TO-220 TO-220FP ■ 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 DESCRIPTION The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. www.DataSheet4U.