STMicroelectronics STB21NM60ND
This is information on a product in full production.| Part No. | STB21NM60ND |
|---|---|
| Datasheet | STB21NM60ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A● Intrinsic fast-recovery body diode
● Worldwide best RDS(on)*area amongst the fast recovery diode devices
● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● Extremely high dv/dt and avalanche capabilities
APPLICATIONS
*● Switching applications
DESCRIPTION
6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0 Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND Table 1. Device summary Marking Package 21NM60ND 21NM60ND 21NM60ND 21NM60ND D²PAK TO-220FP TO-220 TO-247 Packa...
