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STB21NM60ND

Manufacturer: STMicroelectronics

STB21NM60ND datasheet by STMicroelectronics.

STB21NM60ND datasheet preview

STB21NM60ND Datasheet Details

Part number STB21NM60ND
Datasheet STB21NM60ND_STMicroelectronics.pdf
File Size 768.86 KB
Manufacturer STMicroelectronics
Description N-channel MOSFET
STB21NM60ND page 2 STB21NM60ND page 3

STB21NM60ND Overview

6  These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices.

STB21NM60ND Key Features

  • Intrinsic fast-recovery body diode
  • Worldwide best RDS(on)-area amongst the fast
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche

STB21NM60ND from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo STB21NM60ND N-Channel MOSFET INCHANGE
STMicroelectronics logo - Manufacturer

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