STMicroelectronics STB24N60M2
600V 18A N-Channel Power MOSFET
| Part No. | STB24N60M2 |
|---|---|
| Datasheet | STB24N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 18A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 VDS 600 V RDS(on) max. 190 mΩ● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected ID 18 A
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01476v1_tab These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters Product status links STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 DS9377 - Rev 6 - August 2025 For further information, contact your local STMicroelectronics sales office. STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Dr...
