STMicroelectronics STB25N018M9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | STB25N018M9 |
|---|---|
| Datasheet | STB25N018M9 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 250V 56A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STB25N018M9 250 V● Very low FOM (RDS(on)●Qg)
● Higher dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested Application RDS(on) max. 18 mΩ ID 56 A G(1) S(3)
● AC-DC converters
● DC-DC converters
● Microinverter AM01475v1_noZen
DESCRIPTION
The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product status link STB25N018M9 Product summary Order code STB25N018M9 Marking 25N018M9 Package D²PAK Packing Tape and reel DS14765 - Rev 2 - January 2025 For further information, contact your local STMicroelectronics sales office. STB25N018M9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continu...
