STMicroelectronics STB25N80K5
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STB25N80K5 |
|---|---|
| Datasheet | STB25N80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 800V 19.5A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 2 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order code STB25N80K5 STF25N80K5 STP25N80K5 STW25N80K5 VDS 800 V● Ultra-low gate charge
● Very low FoM (figure of merit)
● Zener-protected
● 100% avalanche tested RDS(on) max. 260 mΩ ID 19.5 A
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01476v1_tab These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. Product status links STB25N80K5 STF25N80K5 STP25N80K5 STW25N80K5 DS9179 - Rev 4 - November 2025 For further information, contact your local STMicroelectronics sales office. STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Viso Insulation...
