STMicroelectronics STB25NM60N
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STB25NM60N |
|---|---|
| Datasheet | STB25NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A 1. Limited only by maximum temperature allowed● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance Application
● Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters 3 2 1 TO-220FP 3 1 D²PAK 123 I²PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STB25NM60N B25NM60N STB25NM60N-1 B25NM60N STF25NM60N F25NM60N STP25NM60N STW25NM60N P25NM60N W25NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube June 2008 Rev 12 1/18 18 Contents Contents STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
