STMicroelectronics STB26N60M2
This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology.STB26N60M2 Specifications
- Package : D2PAK
- Drain-Source Resistance : 165mΩ
- Drain-Source Voltage : 600V
- Terminals : 2
- Max Power Dissipation : 169W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STB26N60M2 |
|---|---|
| Datasheet | STB26N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 20A N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STB26N60M2 600 V 165 mΩ 20 A● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB26N60M2 Product summary Order code STB26N60M2 Marking 26N60M2 Package D²PAK Packing Tape and reel DS12061 - Rev 2 - April 2024 For further information contact your local STMicroelectronics sales office. STB26N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
