STMicroelectronics STB27NM60ND
This is information on a product in full production.| Part No. | STB27NM60ND |
|---|---|
| Datasheet | STB27NM60ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 3 1 D2PAK TO-247 3 2 1 Figure 1. Internal schematic diagram $ 4!" ' 3 !- V Order codes VDS@ Tjmax RDS(on) max ID STB27NM60ND STW27NM60ND 650 V 0.16 Ω 21 A● Designed for automotive applications and AEC-Q101 qualified
● The worldwide best RDS(on)*area amongst the fast recovery diode devices
● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● Extremely high dv/dt and avalanche capabilities
APPLICATIONS
● Switching applicationsDESCRIPTION
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Order codes STB27NM60ND STW27NM60ND Table 1. Device summary Marking Packages 27NM60ND D²PAK 27NM60ND TO-247 October 2013 DocID15406 Rev 4 Packaging Tape and reel Tube 1/19 Contents Contents STB27NM60ND, STW27NM60ND 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
