STMicroelectronics STB28NM60ND
This is information on a product in full production.| Part No. | STB28NM60ND |
|---|---|
| Datasheet | STB28NM60ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.150 Ω 23 A STW28NM60ND● Intrinsic fast-recovery body diode
● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● Extremely high dv/dt and avalanche capabilities
APPLICATIONS
● Switching applicationsDESCRIPTION
These FDmesh™ II Power MOSFETs with 6 intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0 Y technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Order codes STB28NM60ND STF28NM60ND STP28NM60ND STW28NM60ND Table 1. Device summary Marking Packages 2 D PAK 28NM60ND TO-220FP TO-220 TO-247 Packaging Tape and reel Tube May 2014 DocID024520 Rev 3 1/22 22 Contents Contents STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
