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STB28NM60ND

Manufacturer: STMicroelectronics

STB28NM60ND datasheet by STMicroelectronics.

STB28NM60ND datasheet preview

STB28NM60ND Datasheet Details

Part number STB28NM60ND
Datasheet STB28NM60ND-STMicroelectronics.pdf
File Size 1.59 MB
Manufacturer STMicroelectronics
Description N-Channel MOSFET
STB28NM60ND page 2 STB28NM60ND page 3

STB28NM60ND Overview

These FDmesh™ II Power MOSFETs with 6  intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0Y technology. Utilizing a new strip-layout vertical structure, these revolutionary devices.

STB28NM60ND Key Features

  • Intrinsic fast-recovery body diode
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche

STB28NM60ND from other manufacturers

View STB28NM60ND datasheet index

Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo STB28NM60ND N-Channel MOSFET INCHANGE
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