STMicroelectronics STB30N10
N-CHANNEL Power MOSFET
| Part No. | STB30N10 |
|---|---|
| Datasheet | STB30N10 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, etc.) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(●) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 100 100 ±20 30 21 120 150 1 –65 to 175 175 Unit V V V A A A W W/°C °C °C (●)Pulse width limited by safe operating area (1)ISD [ 22 A, di/dt m 300A/ms, VDD [ V(BR)DSS, Tj [ T JMA November 2000 This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice. 1/6 STB30N10 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resist...
