STB30NE06L Datasheet PDF

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-263 (suffix“T4”) INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM(●) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 60 60 ±20 30 21 120 80 0.53 –60 to 175 175 Unit V V V A A A W W/°C °C °C (●)Pulse width limited by safe operating area. November 2000 1/6 STB30NE06L THERMAL DATA Rthj-case Rthj-a...