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STB30NF20 - N-channel Power MOSFET

General Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.

Key Features

  • Type VDSS RDS(on) ID STP30NF20 200V 0.075Ω 30A STW30NF20 200V 0.075Ω 30A STB30NF20 200V 0.075Ω 30A.
  • Gate charge minimized.
  • 100% avalanche tested.
  • Excellent figure of merit (RDS.
  • Qg).
  • Very good manufactuing repeability.
  • Very low intrinsic capacitances PTOT 125W 125W 125W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STP30NF20 200V 0.075Ω 30A STW30NF20 200V 0.075Ω 30A STB30NF20 200V 0.075Ω 30A ■ Gate charge minimized ■ 100% avalanche tested ■ Excellent figure of merit (RDS*Qg) ■ Very good manufactuing repeability ■ Very low intrinsic capacitances PTOT 125W 125W 125W Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. 3 2 1 TO-247 3 1 D²PAK 3 2 1 TO-220 Figure 1.