STB30NS15 Datasheet PDF

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM(●) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 150 150 ± 20 30 21 120 110 0.73 2 250 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C
●) Pulse width limited by safe operating area.