STMicroelectronics STB31N65M5
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative S(3) vertical process technology combined with the well-known PowerMESH horizontal AM01475v1_noZen layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.| Part No. | STB31N65M5 |
|---|---|
| Datasheet | STB31N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 22A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS @ TJMAX RDS(on ) max. STB31N65M5 STF31N65M5 STP31N65M5 710 V 148 mΩ STW31N65M5● 100% avalanche tested
● Excellent switching performance
● Extremely low RDS(on)
● Low gate charge and input capacitance
APPLICATIONS
ID 22 A Package D2PAK TO-220FP TO-220 TO-247● Switching applications G(1)
DESCRIPTION
Product status link STB31N65M5 STF31N65M5 STP31N65M5 STW31N65M5 DS8912 - Rev 5 - August 2025 For further information, contact your local STMicroelectronics sales office. STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter D²PAK, TO-220, TO-247 VGS Gate-source voltage ±25 Drain current (continuous) at ID TC = 25 °C 22 Drain current (continuous) at ID TC = 100 °C 13.9 IDM (2) Drain current (pulsed) 88 PTOT Total power dissipation at TC = 25 °C 150 VISO Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, TC = 25 °C) dv/dt (3) Peak diode recovery voltage slope 15 dv/dt (4) MOSFET dv/dt ruggedness 50 TJ Operating junction temperature range Tstg Storage temperature range -55 to 150 1.
