STMicroelectronics STB32N65M5
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative S(3) vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly AM01475v1_noZen suitable for applications requiring high power and superior efficiency.| Part No. | STB32N65M5 |
|---|---|
| Datasheet | STB32N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 24A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS at TJ max. RDS(on) max. ID STB32N65M5 710 V 119 mΩ 24 A● 100% avalanche tested
● Excellent switching performance
● Extremely low RDS(on)
● Low gate charge and input capacitance
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Product status link STB32N65M5 Product summary Order code STB32N65M5 Marking 32N65M5 Package D2PAK Packing Tape and reel DS6032 - Rev 6 - August 2025 For further information, contact your local STMicroelectronics sales office. STB32N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 24 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance junction-to-case RthJA (1) Thermal resistance junction-to-ambient 1.
