STMicroelectronics STB33N65M2
650V 24A N-Channel Power MOSFET
FEATURES
TAB 2 3 1 D2PAK TAB 3 2 1 TO-220FP 1 23 I 2PAK D(2, TAB) Order code STB33N65M2 STF33N65M2 STI33N65M2 VDS 650 V RDS(on) max. 140 mΩ● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
ID 24 A● Switching applications G(1)
DESCRIPTION
These devices are N-channel Power MOSFETs developed using the MDmesh M2 S(3) technology. Thanks to their strip layout and improved vertical structure, these devices AM01476v1_tab exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STB33N65M2 STF33N65M2 STI33N65M2 DS10776 - Rev 2 - August 2025 For further information, contact your local STMicroelectronics sales office. STB33N65M2, STF33N65M2, STI33N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (contin...