STMicroelectronics STB34N65M5
The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.| Part No. | STB34N65M5 |
|---|---|
| Datasheet | STB34N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 28A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 2 3 1 D2PAK TAB TO-220 1 23 D(2, TAB) Order code STB34N65M5 STP34N65M5 VDS 650 V● Higher VDSS rating
● Higher dv/dt capability
● Excellent switching performance
● Extremely low RDS(on)
● 100% avalanche tested RDS(on) max. 110 mΩ ID 28 A
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. Product status links STB34N65M5 STP34N65M5 Product summary Order code STB34N65M5 Marking 34N65M5 Package D²PAK Packing Tape and reel Order code STP34N65M5 Marking 34N65M5 Package TO-220 Packing Tube DS8915 - Rev 5 - November 2025 For further information, contact your local STMicroelectronics sales office. STB34N65M5, STP34N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (cont...
