STMicroelectronics STB35N65M5
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.| Part No. | STB35N65M5 |
|---|---|
| Datasheet | STB35N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 27A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB35N65M5 VDS 650 V RDS(on) max. 98 mΩ ID 27 A● Higher VDSS rating
● Higher dv/dt capability
● Excellent switching performance
● Extremely low RDS(on)
● 100% avalanche tested
APPLICATIONS
G(1) S(3)● Switching applications
DESCRIPTION
AM01475v1_noZen Product status link STB35N65M5 Product summary Order code STB35N65M5 Marking 35N65M5 Package D²PAK Packing Tape and reel DS6068 - Rev 4 - September 2025 For further information, contact your local STMicroelectronics sales office. STB35N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Maximum operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 27 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS.
