STB35N65M5 Description
' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is bined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding...
STB35N65M5 Key Features
- Worldwide best RDS(on)- area
- Higher VDSS rating
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
- High dv/dt capability