DESCRIPTION
It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ±20 40 28 160 115 0.77 13 300 – 55 to 175 (1) ISD ≤35A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (2) Starting Tj = 25°C, ID = 20A, VDD = 80V Unit V V V A A A W W/°C V/ns mJ °C (q ) Pulse width limited by safe operating area April 2003 1/10 STP35NF10 - STB35NF10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Ther...
STMicroelectronics
