STMicroelectronics STB36NF06L
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.| Part No. | STB36NF06L |
|---|---|
| Datasheet | STB36NF06L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STB36NF06LT4 STP36NF06L VDS 60 V 60 V● AEC-Q101 qualified
● Exceptional dv/dt capability
● 100% avalanche tested
● Low gate charge RDS(on) max. 40 mΩ 40 mΩ ID 30 A 30 A G(1) S(3)
APPLICATIONS
● Switching applications AM01475v1_noZenDESCRIPTION
Product status links STB36NF06L STP36NF06L Product summary Order code STB36NF06LT4 Marking B36NF06 Package D²PAK Packing Tape and reel Order code STP36NF06L Marking P36NF06L Package TO-220 Packing Tube DS3365 - Rev 4 - October 2022 For further information contact your local STMicroelectronics sales office. STB36NF06L, STP36NF06L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0 V) VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Derating factor dv/dt(2) Peak diode recovery voltage slope EAS(3) Single-pulse avalanche energy Tstg Storage temperature range TJ Operating junction temperature range 1.
