STB36NM60ND Datasheet PDF

FEATURES

TAB 3 1 D2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 !- V Order codes STB36NM60ND STW36NM60ND VDSS @TJ max. 650 V RDS(on) max. 0.110 Ω ID 29 A
● Designed for automotive applications and AEC-Q101 qualified
● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● Extremely high dv/dt and avalanche capabilities

APPLICATIONS

● Automotive switching applications

DESCRIPTION

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-s