Datasheet4U Logo Datasheet4U.com

STB36NM60ND - N-CHANNEL POWER MOSFET

General Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.

Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.

Key Features

  • TAB 3 1 D2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Order codes STB36NM60ND STW36NM60ND VDSS @TJ max. 650 V RDS(on) max. 0.110 Ω ID 29 A.
  • Designed for automotive.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datasheet - production data Features TAB 3 1 D2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Order codes STB36NM60ND STW36NM60ND VDSS @TJ max. 650 V RDS(on) max. 0.110 Ω ID 29 A • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities Applications • Automotive switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.