STB36NM60ND
STB36NM60ND is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
STB36NM60ND, STW36NM60ND
Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages
- production data
Features
3 1
D2PAK
3 2 1
TO-247
Figure 1. Internal schematic diagram
$4!"
' 3
!-V
Order codes
STB36NM60ND STW36NM60ND
VDSS @TJ max.
650 V
RDS(on) max.
0.110 Ω
ID 29 A
- Designed for automotive applications and AEC-Q101 qualified
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
Applications
- Automotive switching applications
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS...
