STMicroelectronics STB37N60DM2AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STB37N60DM2AG |
|---|---|
| Datasheet | STB37N60DM2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 600V 28A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB37N60DM2AG VDS 600 V RDS(on) max. 110 mΩ ID 28 A● AEC-Q101 qualified
● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applications S(3) AM01476v1_tabDESCRIPTION
Product status link STB37N60DM2AG Product summary Order code STB37N60DM2AG Marking 37N60DM2 Package D²PAK Packing Tape and reel DS11228 - Rev 2 - September 2025 For further information, contact your local STMicroelectronics sales office. STB37N60DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
