STMicroelectronics STB38N65M5
The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.| Part No. | STB38N65M5 |
|---|---|
| Datasheet | STB38N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 30A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB38N65M5 STP38N65M5 STW38N65M5 VDS 650 V● Higher VDSS rating
● Higher dv/dt capability
● Excellent switching performance
● Extremely low RDS(on)
● 100% avalanche tested RDS(on) max. 95 mΩ ID 30 A
APPLICATIONS
G(1) S(3)● Switching applications
DESCRIPTION
AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. Product status links STB38N65M5 STP38N65M5 STW38N65M5 DS8914 - Rev 5 - September 2025 For further information, contact your local STMicroelectronics sales office. STB38N65M5, STP38N65M5, STW38N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Maximum operating junction temperature 1.
