DESCRIPTION
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 900 900 ± 25 3.5 2.2 14 100 0.8 ±50 2.5 3 –65 to 150 150 (1)ISD ≤3.5A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (*).Limited only by maximum temperature allowed Unit V V V A A A W W/°C mA KV V/ns °C °C (●)Pulse width limited by safe operating area...
STMicroelectronics
