STB42N60M2-EP Overview
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. Device summary Marking Package Packaging 42N60M2EP...
STB42N60M2-EP Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected