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STB42N60M2-EP Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP N-channel 600 V, 0.076 Ω typ.

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.

AM01476v1 Table 1: Device summary Marking Package Packaging 42N60M2EP D²PAK TO-220 TO-247 Tape and reel Tube January 2015 DocID027327 Rev 1 This is information on a product in full production.

Key Features

  • Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP STP42N60M2-EP 650 V 0.087 Ω 34 A STW42N60M2-EP.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected Figure 1: Internal schematic diagram D(2, TAB).

STB42N60M2-EP Distributor