STMicroelectronics STB42N65M5
The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.FEATURES
TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order codes VDS RDS(on) max. STB42N65M5 STF42N65M5 STP42N65M5 650 V 79 mΩ STW42N65M5● Extremely low RDS(on)
● Low gate charge and input capacitance
● Excellent switching performance
● 100% avalanche tested ID 33 A
APPLICATIONS
G(1) S(3)● Switching applications
DESCRIPTION
AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. Product status links STB42N65M5 STF42N65M5 STP42N65M5 STW42N65M5 DS6033 - Rev 5 - March 2024 For further information contact your local STMicroelectronics sales office. STB42N65M5, STF42N65M5, STP42N65M5, STW42N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value D²PAK, TO-220, TO-247 TO-220FP VGS Gate-source voltage ±25 Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C 33 20.8 33(...