STB43N60DM2 Datasheet | STMicroelectronics

ures Order code STB43N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.093 Ω ID 34 A PTOT 250 W - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STB43N60DM2 Table 1: Device summary Marking Package 43N60DM2 D²PAK Packing Tape and reel July 2015 Doc ID028058 Rev 1 This is information on a...