STMicroelectronics STB45NF3LL
N-CHANNEL POWER MOSFET
DESCRIPTION
This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERSABSOLUTE MAXIMUM RATINGS
Symbol Parameter TO-220FP INTERNAL SCHEMATIC DIAGRAM Value TO-220/D2PAK TO-220FP 30 30 ± 16 45 32 180 70 0.46 241 -– 55 to 175 (1) Starting Tj= 25°C, ID= 22.5A, VDD= 24V Unit VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Viso Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Max.