STMicroelectronics STB46N30M5
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.| Part No. | STB46N30M5 |
|---|---|
| Datasheet | STB46N30M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 3 1 D2PAK Figure 1. Internal schematic diagram ' 7$% * 6 $0 Y Order code STB46N30M5 VDS 300 V RDS(on) max. 0.04 Ω ID 53 A● Designed for automotive applications and AEC-Q101 qualified
● Amongst the best RDS(on) * area
● High dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STB46N30M5 Table 1. Device summary Marking Packages 46N30M5 D2PAK Packaging Tape and reel April 2014 This is information on a product in full production. DocID026126 Rev 2 1/17 Contents Contents STB46N30M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
