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STB47N50DM6AG Datasheet Automotive-grade N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: STB47N50DM6AG Datasheet Automotive-grade N-channel 500 V, 61 mΩ typ.

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.

Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

DS12118 - Rev 4 - May 2018 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code STB47N50DM6AG VDS 500 V RDS(on) max. 71 mΩ ID 38 A.
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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