STMicroelectronics STB47N50DM6AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast‑recovery diode series.| Part No. | STB47N50DM6AG |
|---|---|
| Datasheet | STB47N50DM6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 500V 38A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB47N50DM6AG VDS 500 V RDS(on) max. 71 mΩ ID 38 A● AEC-Q101 qualified
● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applications S(3) AM01476v1_tabDESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB47N50DM6AG Product summary Order code STB47N50DM6AG Marking 47N50DM6 Package D2PAK Packing Tape and reel DS12118 - Rev 5 - September 2025 For further information, contact your local STMicroelectronics sales office. STB47N50DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute...
