STMicroelectronics STB4N62K3
This is information on a product in full production.| Part No. | STB4N62K3 |
|---|---|
| Datasheet | STB4N62K3 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2,TAB) Order codes STB4N62K3 STD4N62K3 VDS RDS(on) max. ID 620 V 2Ω 3.8 A PW 70 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applications G(1) S(3) AM01476v1DESCRIPTION
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Order code STB4N62K3 STD4N62K3 Table 1. Device summary Marking Packages 4N62K3 D²PAK DPAK Packaging Tape and reel September 2013 DocID18337 Rev 3 1/22 Contents Contents STB4N62K3, STD4N62K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
