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STB4NC50 - N-CHANNEL MOSFET

General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh™II MOSFET TYPE STB4NC50 www.DataSheet4U.com s TYPICAL s s s s STB4NC50 VDSS 500V RDS(on) < 2.7Ω ID 4A RDS(on) = 2.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED D²PAK 3 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.