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STB4NC50 Datasheet PDF

STMicroelectronics STB4NC50

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Part No. STB4NC50
Datasheet STB4NC50 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STB4NC50 datasheet page 1 preview

DESCRIPTION

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS s INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 4 2.5 12 80 0.64 3.5 –65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C (●)Pulse width limited by safe operating area (1)ISD ≤4A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX. July 2000 1/8 okDatasheet.com - Free Datasheet Search Engine STB4NC50 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Ju...
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