STMicroelectronics STB4NK60Z-1
N-CHANNEL Power MOSFET
FEATURES
Type STB4NK60Z STB4NK60Z-1 STD4NK60Z STD4NK60Z-1 STP4NK60Z STP4NK60ZFP VDSS 600 V 600 V 600 V 600 V 600 V 600 V RDS(on) max <2Ω <2Ω <2Ω <2Ω <2Ω <2Ω PW 70 W 70 W 70 W 70 W 70 W 25 W● 100% avalanche tested
● Very low intrinsic capacitances ID 4A 4A 4A 4A 4A 4A Application
● Switching applications
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 3 2 1 TO-220 IPAK 3 2 1 3 1 DPAK 123 I²PAK 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STB4NK60Z B4NK60Z STB4NK60Z-1 B4NK60Z STD4NK60Z D4NK60Z STD4NK60Z-1 STP4NK60Z D4NK60Z P4NK60Z STP4NK60ZFP P4NK60ZFP Package D²PAK I²PAK DPAK IPAK TO-220...