STMicroelectronics STB55NF03L
This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STB55NF03L |
|---|---|
| Datasheet | STB55NF03L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
D2PAK TO-263 ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
s LOW VOLTAGE DC-DC CONVERTERS DataSheet4U.com s HIGH CURRENT, HIGH SPEED SWITCHING s HIGH EFFICIENCY SWITCHING CIRCUITS DataSheeABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (● ) P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value 30 30 ± 20 55 39 220 80 0.53 -65 to 175 175 Un it V V V A A A W W /o C o o C C (●) Pulse width limited by safe operating area 10/01/2000 1/8 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com STB55NF03L THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Pur...
