STMicroelectronics STB57N65M5
The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.| Part No. | STB57N65M5 |
|---|---|
| Datasheet | STB57N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 42A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 2 3 1 D2 PAK TAB 3 2 1 TO-220FP 1 23 TO-220 D(2, TAB) Order codes VDS RDS(on) max. STB57N65M5 STF57N65M5 650 V 63 mΩ STP57N65M5● 100% avalanche tested
● Excellent switching performance
● Extremely low RDS(on)
● Low gate charge and input capacitance
APPLICATIONS
ID 42 A● Switching applications G(1)
DESCRIPTION
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative S(3) vertical process technology combined with the well-known PowerMESH horizontal AM01475v1_noZen layout. Product status links STB57N65M5 STF57N65M5 STP57N65M5 DS8913 - Rev 6 - August 2025 For further information, contact your local STMicroelectronics sales office. STB57N65M5, STF57N65M5, STP57N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode re...
