Datasheet Summary
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a D²PAK package
- production data
2 3
D²PAK
Figure 1: Internal schematic diagram
Features
Order code STB5N80K5
VDS 800 V
RDS(on) max. 1.75 Ω
ID 4A
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power...