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STB5NC50-1 Datasheet PDF

STMicroelectronics STB5NC50-1

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Part No. STB5NC50-1
Datasheet STB5NC50-1 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL POWER MOSFET
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STB5NC50-1 datasheet page 1 preview

DESCRIPTION

I2PAK INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value STP5NC50 STB5NC50/-1 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 175 -65 to 175 (*)Limited only by maximum temperature allowed DataShe e Unit STP5NC50FP V V V 5.5(*) 3.5(*) 22 35 0.28 A A A W W/°C V/ns 2500 V °C °C 500 500 ±30 5.5 3.5 22 100 0.8 3.5 (●)Pulse width limited by safe operating area (1)ISD ≤5.5A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
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