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STB5NC90Z-1 Datasheet PDF

STMicroelectronics STB5NC90Z-1

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Part No. STB5NC90Z-1
Datasheet STB5NC90Z-1 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL POWER MOSFET
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STB5NC90Z-1 datasheet page 1 preview

DESCRIPTION

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. DataSheet4U.com

APPLICATIONS

s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -- I²PAK (Tabless TO-220) DataShee Value STP(B)5NC90Z(-1) 900 900 ± 25 4.6 2.9 18 125 1 ±50 3 3 2000 –65 to 150 150 (1)ISD ≤4.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (*).Limited only by maxim...
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