GENERAL FEATURES
TYPE STB5NK50Z STB5NK50Z-1 STD5NK50Z STD5NK50Z-1 STP5K50Z STP5K50ZFP s s s s s s s Figure 1: Package ID 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A Pw 70 W 70 W 70 W 70 W 70 W 25 W TO-220 VDSS 500 500 500 500 500 500 V V V V V V RDS(on) < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω 3 12 3 1 2 TYPICAL RDS(on) = 1.22 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY I2PAK TO-220FP 3 1 3 1 1 3 2 DPAK D2PAK IPAK Figure 2: Internal Schematic Diagram DESCRIPTION
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. DataShee APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING Table 2: Order Codes SAL...
STMicroelectronics
