STMicroelectronics STB60NE03L-12
N-CHANNEL Power MOSFET
STB60NE03L-12 Specifications
- Drain-Source Resistance : 18mΩ
- Min Breakdown Voltage : 30V
- Terminals : 2
- Max Power Dissipation : 100W
- Max Operating Temp : 175°C
Source:
Octopart
| Part No. | STB60NE03L-12 |
|---|---|
| Datasheet | STB60NE03L-12 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVIRONMENT s INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (● ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor dv/dt T stg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 30 30 ± 20 60 42 240 100 0.67 7 -65 to 175 175 (1) ISD ≤ 60 A, di/d...
